Photoconductivity in amorphous thin films of Ge22Se68Bi 10

Temperature and intensity dependence of steady state photoconductivity is studied in amorphous thin films of Ge22Se68Bi10 prepared by vacuum evaporation. Photoconductivity increases exponentially with temperature between 310 K and 410 K and no maxima is found in this temperature range. The ratio Iph/Id is about 6 at 310 K and decreases continuously as temperature is increased. Photoconductivity with intensity follows a power law where the power (03B3) varies from 0.86 to 0.62 as the temperature is increased from 310 K to 380 K. Transient photoconductivity and thermally stimulated currents have also been measured on the same sample. A non-exponential decay of photoconductivity is observed which is very slow at room temperature in this material. A peak in TSC is observed at 365 K. The present measurements indicate the presence of continuous distribution of localized states in thin films of Ge22Se68Bi10. Tome 21 N° 10 OCTOBRE Revue Phys. Appl. 21 (1986) 579-584 OCTOBRE 1986,